050-7423 rev b 8-2004 typical performance curves APT75GP120JDF3 the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 50 khz operation @ 800v, 20a ? low gate charge ? 20 khz operation @ 800v, 44a ? ultrafast tail current shutoff ? rbsoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 1200 3 4.5 6 3.3 3.9 3.0 1250 5500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1250a) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l APT75GP120JDF3 1200 20 30 128 57 300 300a @ 960v 543 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c reverse bias safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt g c e sot-227 g e e c isotop ? "ul recognized" APT75GP120JDF3 1200v
050-7423 rev b 8-2004 APT75GP120JDF3 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 75a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 600v v ge = 15v i c = 75a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 75a r g = 5 ? t j = +125c min typ max 7035 460 80 7.5 320 50 140 300 20 40 165 55 1620 4100 2500 20 40 245 115 1620 5850 4820 unit pf v nc a ns j ns j unit c/w gm min typ max .23 .56 29.2 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein. characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6
050-7423 rev b 8-2004 typical performance curves APT75GP120JDF3 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 01 23 4 5 012 3 4 5 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 6 8 10 12 14 16 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t c =125c t c =25c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 75a t j = 25c t j = 25c t j = -55c t j = 125c t c =25c t c =125c 250s pulse test <0.5 % duty cycle 160 140 120 100 80 60 40 20 0 250 200 150 100 50 0 5 4 3 2 1 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 160 140 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 5 4 3 2.0 1.0 0 180 160 140 120 100 80 60 40 20 0 v ce =960v v ce =600v v ce =240v t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 37.5a i c = 75a i c = 150a i c = 150a i c = 37.5a i c = 75a
050-7423 rev b 8-2004 APT75GP120JDF3 t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 600v r g = 5 ? l = 100 h v ge = 10v,t j =125c v ge = 15v v ge = 10v v ge =15v,t j =125c v ge = 10v,t j =25c v ge = 15v,t j =25c i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 10 40 70 100 130 160 10 40 70 100 130 160 10 40 70 100 130 160 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 0 25 50 75 100 125 40 30 20 10 0 120 100 80 60 40 20 0 14000 12000 10000 8000 6000 4000 2000 0 20000 15000 10000 5000 350 300 250 200 150 100 50 0 160 140 120 100 80 60 40 20 0 12000 10000 8000 6000 4000 2000 0 15000 12500 10000 7500 5000 2500 0 v ce = 600v t j = 25c or 125c r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 600v r g = 5 ? , l = 100 h, v ce = 600v t j =125c, v ge =15v t j =125c,v ge =10v t j = 25c, v ge =10v t j = 25c, v ge =15v e off 150a e on2 150a e on2 37.5a e off 75a e on2 75a e off 37.5a e on2 37.5a e off 75a e on2 75a e on2 150a e off 150a e off 37.5a v ce = 600v l = 100 h r g = 5 ? v ce = 600v v ge = +15v t j = 125c v ce = 600v v ge = +15v r g = 5 ? t j = 25c, v ge = 10v or 15v t j = 125c, v ge = 10v or 15v v ce = 600v l = 100 h r g = 5 ?
050-7423 rev b 8-2004 typical performance curves APT75GP120JDF3 20 35 50 65 80 95 110 50 10 1 0.25 0.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 20,000 10,000 1,000 500 100 50 10 350 300 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000 i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 800v r g = 5 ? c ies c oes max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = c res figure 19b, transient thermal impedance model 0.0221 0.0498 0.158 0.00140f 0.0416f 0.543f power (watts) junction temp ( c) rc model case temperature ( c)
050-7423 rev b 8-2004 APT75GP120JDF3 figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions t j = 125 c gate voltage collector voltage collector current 10% t d(on) 90% t r 5 % switching energy 5% 10% collector current 0 collector voltage gate voltage switching energy 10% 90% t f t j = 125 c 90% t d(off) i c a d.u.t. v ce figure 21, inductive switching test circuit v cc *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit apt60df120
050-7423 rev b 8-2004 typical performance curves APT75GP120JDF3 characteristic / test conditions maximum average forward current (t c = 75c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 75a forward voltage i f = 150a i f = 75a, t j = 125c static electrical characteristics unit amps unit volts min typ max 3.20 4.00 2.27 APT75GP120JDF3 50 62 540 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery anti-parallel diode min typ max - 38 - 410 - 695 -4- - 415 - 3280 -12- - 180 - 5100 -42 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 60a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 60a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 60a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.60 0.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 figure 25b, transient thermal impedance model 0.148 c/w 0.238 c/w 0.174 c/w 0.00600 j/ c 0.0909 j/ c 0.524 j/ c power (watts) junction temp ( c) rc model case temperature ( c)
050-7423 rev b 8-2004 APT75GP120JDF3 t j = 125 c v r = 800v 30a 60a 120a t rr q rr q rr t rr i rrm q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55 c t j = 25 c t j = 125 c t j = 150 c 60a 30a 120a duty cycle = 0.5 t j = 150 c t j = 125 c v r = 800v t j = 125 c v r = 800v 80 70 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) 0 1 2 3 4 5 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 60a 120a 30a 500 400 300 200 100 0 50 40 30 20 10 0 200 180 160 140 120 100 80 60 40 20 0 7000 6000 5000 4000 3000 2000 1000 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 400 350 300 250 200 150 100 50 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage 0 25 50 75 100 125 150 25 50 75 100 125 150 1 10 100 200
050-7423 rev b 8-2004 typical performance curves APT75GP120JDF3 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt10035lll
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